Invited Speakers - High-Resolution Depth Profiling
June 27th - 30th, 2011

Chris Baddeley, University of St Andrews, Scotland

  Using MEIS  to probe segregation effects in bimetallic nanoparticles.

Didier Blavette, Institut Universtaire de France, Rouvray, France

  Ultimate depth profiling using Atom Probe Tomography

Victor Etgens, INSP, Paris, France

   Layer-by-layer film growth monitored by Grazing Incidence Fast Atom Diffraction

Lyudmila Goncharova, University of Wesern Ontario, London, Canada

  Transport and exchange of hydrogen and oxygen isotopes using medium energy ion scattering

Torgny Gustafsson, Rutgers University, USA

  Medium Energy Ion Scattering from Novel Materials: High-k, SiC, Oxide Interfaces and Topological Insulators.

Anton Visikovskiy, Ritsumeikan, Japan     

  Oxygen deficiency and excess of metal-oxide surfaces analyzed by MEIS and ERD

Kenji Kimura, Kyoto, Japan

  Improvement of sensitivity in high-resolution RBS by reducing detector noise

Tim Noakes, Daresbury, UK

  Dealing with disorder, defects and amorphicity in medium energy ion scattering experiments

Esteban Sánchez, Bariloche, Argentina

            unable to attend due to volcanic eruption

  Adsorption and thermal stability of organic films on surfaces monitored by Direct Recoil Spectroscopy

V. Shutthanandan, Pacific Northwest Labratory, Richland, USA

  High resolution depth profile analysis of interface mixing at the LaAlO₃/SrTiO₃ interface

Wilfried Vandervorst, IMEC, Belgium

  High Resolution SIMS Depth Profiling